AOD522P
MOSFET N-CH 30V 17A/46A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AlphaMOS AOD522P is a N-Channel Power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 30 V and offers continuous drain current (Id) capabilities of 17 A at ambient temperature and 46 A at case temperature. With a low on-resistance (Rds On) of 5.2 mOhm at 20 A and 10 V, it minimizes conduction losses. The AOD522P is available in a TO-252 (DPAK) surface-mount package, facilitating efficient thermal management with a power dissipation of 53 W (Tc). Key electrical characteristics include a gate charge (Qg) of 18 nC (max) and input capacitance (Ciss) of 1500 pF (max). This component is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 46A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 53W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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