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AOD518

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AOD518

MOSFET N-CH 30V 15A/54A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD518 is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 30 V. This device features a maximum continuous drain current of 15 A at ambient temperature (Ta) and 54 A at case temperature (Tc). The Rds(On) is specified at a maximum of 8 mOhm at 20 A and 10 V gate-source voltage. Gate charge (Qg) is 22.5 nC maximum at 10 V, and input capacitance (Ciss) is 951 pF maximum at 15 V. Power dissipation is rated at 2.5 W (Ta) and 50 W (Tc). The AOD518 is housed in a TO-252 (DPAK) surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.6V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds951 pF @ 15 V

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