AOD508
MOSFET N-CH 30V 22A/70A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, AOD508, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 22A at 25°C ambient and 70A at 25°C case temperature. This TO-252 (DPAK) packaged device features a low on-resistance of 3mOhm maximum at 20A and 10V Vgs, with a gate threshold voltage of 2.2V maximum at 250µA. With a maximum power dissipation of 2.5W (Ta) or 50W (Tc) and an operating temperature range of -55°C to 175°C, the AOD508 is suitable for applications requiring efficient power switching. Drive voltages range from 4.5V to 10V. Key parameters include a gate charge (Qg) of 49 nC maximum at 10V and input capacitance (Ciss) of 2010 pF maximum at 15V. The component is supplied in Tape & Reel packaging. This MOSFET is commonly utilized in automotive and industrial power management applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2010 pF @ 15 V |
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