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AOD502

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AOD502

MOSFET N-CH 25V 15A/46A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaMOS AOD502 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 25V drain-source breakdown voltage (Vdss) and offers a continuous drain current capability of 15A at 25°C ambient (Ta) and 46A at 25°C case (Tc). The device boasts a low Rds(on) of 8mOhm maximum at 20A and 10V gate-source voltage. It supports a wide gate drive voltage range from 4.5V to 10V and has a maximum gate charge (Qg) of 18 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1187 pF at 15V. The AOD502 is housed in a TO-252 (DPAK) surface-mount package, dissipating up to 2.5W (Ta) or 50W (Tc). It is suitable for operation across a temperature range of -55°C to 175°C (TJ). This MOSFET finds application in automotive and industrial power management systems.

Additional Information

Series: AlphaMOSRoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs8mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1187 pF @ 15 V

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