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AOD4T60P

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AOD4T60P

MOSFET N-CH 600V 4A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOD4T60P is an N-Channel MOSFET designed for high-voltage applications. This component offers a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C. The Rds On is specified at a maximum of 2.1 Ohms at 2A and 10V gate drive. Featuring a low input capacitance of 522pF at 100V and a gate charge of 15nC at 10V, this device is suitable for power switching applications. With a maximum power dissipation of 83W at 25°C (Tc), it supports efficient thermal management. The AOD4T60P is packaged in a TO-252 (DPAK) surface-mount package, ideal for automated assembly. Operating temperature ranges from -55°C to 150°C. This component finds application in power supplies, lighting, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs2.1Ohm @ 2A, 10V
FET Feature-
Power Dissipation (Max)83W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds522 pF @ 100 V

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