AOD4S60
MOSFET N-CH 600V 4A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. aMOS™ AOD4S60 is an N-Channel MOSFET designed for high-voltage applications. This component features a Vdss rating of 600V and a continuous drain current (Id) of 4A at 25°C. With a maximum power dissipation of 56.8W (Tc), it is suitable for demanding environments. Key electrical characteristics include a maximum Rds On of 900mOhm at 2A and 10V, and a gate charge (Qg) of 6 nC at 10V. The input capacitance (Ciss) is rated at 263 pF. The AOD4S60 utilizes a TO-252 (DPAK) surface mount package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly employed in power supply units and industrial power control systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56.8W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |
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