AOD4C60
MOSFET N-CH 600V 4A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. offers the AOD4C60, an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 600 V and a continuous Drain Current (Id) of 4A at 25°C (Tc). With a maximum Power Dissipation of 125W (Tc) and an Rds On of 950mOhm at 1.3A and 10V, it is suitable for demanding power conversion circuits. The device is housed in a TO-252 (DPAK) surface-mount package, facilitating efficient thermal management and board integration. Key parameters include a Gate Charge (Qg) of 18 nC (Max) and Input Capacitance (Ciss) of 910 pF (Max). It operates within a temperature range of -50°C to 175°C (TJ). This MOSFET finds application in power supplies, lighting, and industrial control systems. The AOD4C60 is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 910 pF @ 100 V |
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