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AOD421

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AOD421

MOSFET P-CH 20V 12.5A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. presents the AOD421, a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 12.5 A at 25°C. The device offers a low on-resistance (Rds On) of 75 mOhm maximum at 12.5 A and 10 V, with a gate drive voltage range of 2.5 V to 4.5 V. Key parameters include a maximum gate charge (Qg) of 4.6 nC at 4.5 V and input capacitance (Ciss) of 620 pF at 10 V. The AOD421 is housed in a TO-252 (DPAK) surface-mount package, allowing for robust thermal management with a maximum power dissipation of 2 W (ambient) and 18.8 W (case). This MOSFET is suitable for use in automotive and industrial systems requiring reliable power control. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C12.5A (Ta)
Rds On (Max) @ Id, Vgs75mOhm @ 12.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 18.8W (Tc)
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 10 V

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