AOD418
MOSFET N-CH 30V 13.5A/36A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD418 is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 13.5 A at 25°C ambient and 36 A at 25°C case temperature. The AOD418 exhibits a low on-resistance (Rds On) of 7.5 mOhm maximum at 20 A and 10 V gate-to-source voltage. Power dissipation is rated at 2.5 W (Ta) and 50 W (Tc). Key parameters include a gate charge (Qg) of 24 nC maximum at 10 V and input capacitance (Ciss) of 1380 pF maximum at 15 V. It operates from a drive voltage range of 4.5 V to 10 V and has a maximum gate-to-source voltage (Vgs) of ±20 V. The threshold voltage (Vgs(th)) is 2.5 V maximum at 250 µA. This component is housed in a TO-252 (DPAK) surface mount package and is supplied on tape and reel. Applications include power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.5A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 15 V |
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