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AOD4158P

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AOD4158P

MOSFET N-CH 30V 13A/46A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD4158P is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 30V and offers a continuous drain current (Id) of 13A at 25°C ambient and 46A at 25°C case temperature. With a low on-resistance (Rds On) of 9mOhm at 20A and 10V gate drive, it minimizes conduction losses. The device supports a wide gate-source voltage range from ±20V, with a typical threshold voltage (Vgs(th)) of 2.4V at 250µA. Key parameters include a maximum gate charge (Qg) of 18 nC at 10V and a maximum input capacitance (Ciss) of 1500 pF at 15V. The AOD4158P is housed in a TO-252 (DPAK) surface-mount package and can dissipate up to 2.5W (Ta) or 32W (Tc), operating within an extended temperature range of -55°C to 175°C. This MOSFET is suitable for use in automotive, industrial, and consumer electronics power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C13A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V

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