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AOD4158

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AOD4158

MOSFET N-CH 30V 17A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD4158 is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 46A at 25°C (Tc). With a low on-resistance of 9mOhms at 20A and 10V (Vgs), the AOD4158 minimizes conduction losses. The TO-252 (DPAK) surface-mount package ensures efficient thermal management, supporting a maximum power dissipation of 32W at 25°C (Tc). Key electrical parameters include a gate-source voltage range of ±20V, a gate charge of 18nC at 10V, and input capacitance (Ciss) of 1500pF at 15V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is suitable for various power management solutions, including automotive and industrial systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C46A (Tc)
Rds On (Max) @ Id, Vgs9mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)32W (Tc)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V

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