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AOD4120L

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AOD4120L

MOSFET N-CH 20V 25A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD4120L is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 25A at 25°C (Tc). With a low On-Resistance (Rds On) of 18mOhm at 20A and 10V, it minimizes conduction losses. The AOD4120L offers efficient switching with a Gate Charge (Qg) of 18nC (Max) at 10V and an Input Capacitance (Ciss) of 900pF (Max) at 10V. It supports a wide Gate-Source voltage range from 2.5V to 10V for optimal drive. This MOSFET is packaged in a surface-mount TO-252 (DPAK) and can dissipate up to 33W (Tc) or 2.5W (Ta). Operating temperature ranges from -55°C to 175°C (TJ). Typical applications include power management, battery protection, and load switching in consumer electronics and industrial systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V

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