AOD4120L
MOSFET N-CH 20V 25A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD4120L is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 25A at 25°C (Tc). With a low On-Resistance (Rds On) of 18mOhm at 20A and 10V, it minimizes conduction losses. The AOD4120L offers efficient switching with a Gate Charge (Qg) of 18nC (Max) at 10V and an Input Capacitance (Ciss) of 900pF (Max) at 10V. It supports a wide Gate-Source voltage range from 2.5V to 10V for optimal drive. This MOSFET is packaged in a surface-mount TO-252 (DPAK) and can dissipate up to 33W (Tc) or 2.5W (Ta). Operating temperature ranges from -55°C to 175°C (TJ). Typical applications include power management, battery protection, and load switching in consumer electronics and industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 33W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 10 V |
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