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AOD4120

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AOD4120

MOSFET N-CH 20V 25A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOD4120 is an N-Channel Power MOSFET designed for demanding applications. This device features a 20V drain-source breakdown voltage and a continuous drain current capability of 25A at 25°C (Tc). With a low on-resistance of 18mOhm at 20A and 10V Vgs, it minimizes conduction losses. The AOD4120 is housed in a TO-252 (DPAK) surface-mount package, offering efficient thermal management with a maximum power dissipation of 33W at 25°C (Tc). Key parameters include a gate charge of 18 nC (max) and input capacitance of 900 pF (max). Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for power management, automotive, and industrial control systems. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds900 pF @ 10 V

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