AOD4102L
MOSFET N-CH 30V 8A/19A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOD4102L is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and offers a continuous drain current (Id) of 8A at ambient temperature (Ta) and 19A at case temperature (Tc). Its low on-resistance (Rds On) is specified as a maximum of 37mOhm at 12A and 10V Vgs.
The AOD4102L is packaged in a TO-252 (DPAK) surface-mount package, suitable for automated assembly. Key electrical characteristics include a maximum gate charge (Qg) of 8.1 nC at 10V Vgs and a maximum input capacitance (Ciss) of 432 pF at 15V Vds. Power dissipation capabilities are 4.2W (Ta) and 21W (Tc). Operating temperature ranges from -55°C to 175°C (TJ). Drive voltages for optimal performance range from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. The threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. This device finds application in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 37mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 4.2W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 432 pF @ 15 V |
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