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AOD4102

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AOD4102

MOSFET N-CH 30V 8A/19A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD4102 is an N-Channel, 30V power MOSFET designed for surface mount applications. This component features a low Rds(on) of 37mOhm at 12A and 10V Vgs, with a continuous drain current capability of 8A at ambient temperature and 19A at case temperature. The device supports a wide gate drive voltage range from 4.5V to 10V, and a maximum gate-source voltage of ±20V. Key electrical parameters include a maximum gate charge of 6.6 nC and an input capacitance of 360 pF at 15V. The AOD4102 is housed in a TO-252 (DPAK) package and operates within a temperature range of -55°C to 175°C. Power dissipation is rated at 4.2W (Ta) and 21W (Tc). This MOSFET is utilized in various power management applications, including DC-DC converters and load switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs37mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)4.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id3V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs6.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 15 V

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