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AOD403

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AOD403

MOSFET P-CH 30V 15A/70A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. P-Channel Power MOSFET, part number AOD403, offers robust performance in a TO-252 (DPAK) surface-mount package. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 15A at ambient temperature, scaling to 70A at case temperature. The low on-resistance (Rds On) of 6mOhm at 20A and 20V drive voltage ensures efficient power handling. With a maximum power dissipation of 2.5W at ambient and 90W at case temperature, the AOD403 is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 120nC max and input capacitance (Ciss) of 5300pF max. This component is widely utilized in power management, automotive electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs6mOhm @ 20A, 20V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 90W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V, 20V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5300 pF @ 15 V

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