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AOD3T40P

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AOD3T40P

MOSFET N-CH 400V 2A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Alpha & Omega Semiconductor Inc. AOD3T40P is an N-Channel MOSFET designed for applications requiring high voltage and efficient switching. This component features a Drain-Source Voltage (Vdss) of 400 V and a continuous drain current (Id) of 2A at 25°C. The device offers a maximum On-Resistance (Rds On) of 3.3 Ohm at 1A and 10V, with a Gate Charge (Qg) of 6 nC at 10V. Its low input capacitance (Ciss) of 139 pF at 100V contributes to efficient high-frequency operation. The AOD3T40P is packaged in a TO-252 (DPAK) surface-mount case, facilitating integration into compact designs. With a power dissipation capability of 35W (Tc), this MOSFET is suitable for use in power supply units, lighting, and industrial control systems. It operates across a temperature range of -50°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs3.3Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)35W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)400 V
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds139 pF @ 100 V

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