AOD3N80
MOSFET N-CH 800V 2.8A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOD3N80 is an N-Channel Power MOSFET designed for high voltage applications. This device features a maximum Drain-to-Source Voltage (Vdss) of 800V and a continuous Drain Current (Id) of 2.8A at 25°C. With a low Rds On of 4.8 Ohms at 1.5A and 10V, it offers efficient power handling with a maximum power dissipation of 83W. The AOD3N80 is packaged in a TO-252 (DPAK) surface mount configuration, suitable for various power conversion and control circuits within the industrial and consumer electronics sectors. Key electrical characteristics include a Gate Charge (Qg) of 10 nC at 10V and an input capacitance (Ciss) of 510 pF at 25V. The operating temperature range is -50°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 25 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
