AOD3C60
MOSFET N-CH 600V 3A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. presents the AOD3C60, an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 3A at 25°C. The AOD3C60 offers a maximum Rds On of 1.4 Ohm at 1A and 10V, with a gate charge (Qg) of 15 nC at 10V. Its input capacitance (Ciss) is specified at 648 pF maximum at 100V. Packaged in a TO-252 (DPAK) surface mount configuration, this device supports a maximum power dissipation of 89W at 25°C. Operating temperature range is -50°C to 150°C. This MOSFET is suitable for power conversion and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 648 pF @ 100 V |
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