AOD2N60A
MOSFET N-CH 600V 2A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOD2N60A is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 2A at 25°C. With a maximum power dissipation of 57W (Tc) and a low on-resistance (Rds On) of 4.7 Ohm at 1A and 10V, it offers efficient switching performance. The AOD2N60A utilizes MOSFET technology and is housed in a TO-252 (DPAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge (Qg) of 11 nC (Max) at 10V and input capacitance (Ciss) of 295 pF (Max) at 25V. Operating temperature range is -50°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V and a threshold voltage (Vgs(th)) of 4.5V (Max) at 250µA. This device is commonly employed in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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