AOD2N100
MOSFET N-CH 1000V 2A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOD2N100, features a 1000V drain-source voltage (Vdss) and 2A continuous drain current (Id) at 25°C. This TO-252 (DPAK) packaged device offers a maximum power dissipation of 83W (Tc) and a low on-resistance of 9 Ohms at 1A, 10V. Key parameters include a gate charge (Qg) of 15 nC at 10V and input capacitance (Ciss) of 580 pF at 25V. With a ±30V maximum gate-source voltage (Vgs) and an operating temperature range of -50°C to 150°C, this MOSFET is suitable for high-voltage switching applications in power supplies and industrial automation. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
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