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AOD2908

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AOD2908

MOSFET N-CH 100V 9A/52A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD2908 is an N-Channel Power MOSFET designed for demanding applications. This device features a 100V drain-source breakdown voltage and offers a continuous drain current of 9A at a 25°C ambient temperature, scaling to 52A at a 25°C case temperature. The AOD2908 exhibits a low on-resistance (Rds On) of 13.5mOhm maximum at 20A and 10V gate drive. It is housed in a surface-mount TO-252 (DPAK) package, facilitating efficient thermal management with a power dissipation of 2.5W (Ta) and 75W (Tc). Key parameters include a gate charge of 27 nC (Max) at 10V and input capacitance of 1670 pF (Max) at 50V. This MOSFET is suitable for use in power supply, motor control, and lighting applications. The operating junction temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C9A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs13.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id4.1V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1670 pF @ 50 V

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