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AOD2904

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AOD2904

MOSFET N-CH 100V 10.5A/70A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOD2904, offers a 100V drain-source breakdown voltage. This device features a low on-resistance of 10mOhm maximum at 20A and 10V Vgs. Continuous drain current is rated at 10.5A at ambient temperature and 70A at case temperature. Power dissipation is 2.7W (Ta) and 125W (Tc). The AOD2904 is housed in a TO-252 (DPAK) surface-mount package and operates across a temperature range of -55°C to 175°C. Key electrical parameters include a gate charge of 52 nC maximum at 10V Vgs and input capacitance (Ciss) of 2785 pF maximum at 50V Vds. This component is suitable for applications in power management and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10.5A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs10mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id3.4V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2785 pF @ 50 V

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