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AOD2610

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AOD2610

MOSFET N-CH 60V 10A/46A TO252

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOD2610 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 60V drain-source voltage (Vdss) and supports continuous drain currents of 10A at 25°C ambient and 46A at 25°C case temperature. The AOD2610 offers a low on-resistance (Rds On) of 10.7mOhm maximum at 20A and 10V gate drive. Its typical gate charge is 25nC at 10V, and input capacitance (Ciss) is 2410pF maximum at 30V. Power dissipation is rated at 2.5W (Ta) and 71.5W (Tc). Packaged in a TO-252-3, DPAK surface-mount configuration, this MOSFET operates within a junction temperature range of -55°C to 175°C. Applications include switch mode power supplies, DC-DC converters, and power management solutions across various industrial sectors. The AOD2610 is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs10.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 71.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2410 pF @ 30 V

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