AOD208
MOSFET N-CH 30V 18A/54A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD208 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and offers continuous drain current capability of 18A at 25°C ambient temperature (Ta) and 54A at 25°C case temperature (Tc). The AOD208 exhibits a low on-resistance (Rds On) of 4.4mOhm maximum at 20A and 10V gate-source voltage (Vgs). Maximum power dissipation is rated at 2.5W (Ta) and 62W (Tc). The MOSFET is housed in a TO-252 (DPAK) package suitable for surface mounting. Key parameters include a gate charge (Qg) of 35 nC maximum at 10V Vgs and input capacitance (Ciss) of 2210 pF maximum at 15V Vds. Its robust design makes it suitable for use in automotive, industrial, and consumer electronics power management systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 54A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 62W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2210 pF @ 15 V |
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