AOD200
MOSFET N-CH 30V 14A/36A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOD200 is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current capability of 14A at 25°C ambient and 36A at 25°C case temperature. With a low on-resistance (Rds On) of 7.8mOhm maximum at 20A and 10V Vgs, it minimizes conduction losses. The device supports gate drive voltages from 4.5V to 10V and exhibits a maximum gate charge of 16nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1300pF at 15V. The AOD200 is housed in a TO-252 (DPAK) surface-mount package, suitable for compact designs. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). Operating temperature range is -55°C to 175°C. This MOSFET is utilized in industries such as consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Ta), 36A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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