AOD1R4A70
MOSFET N-CH 700V 3.8A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ N-Channel MOSFET, part number AOD1R4A70, offers a 700V drain-source voltage with a continuous drain current of 3.8A (Tc). This device features a maximum on-resistance of 1.4 Ohm at 1A, 10V, and a gate charge of 8 nC at 10V. With a power dissipation of 48W (Tc) and an operating temperature range of -55°C to 150°C (TJ), it is suitable for high-voltage switching applications. The TO-252-3, DPAK (SC-63) surface mount package facilitates efficient thermal management. This component is commonly utilized in power supply units, lighting, and industrial control systems.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 100 V |
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