AOD1N60M
MOSFETManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. N-Channel Power MOSFET, part number AOD1N60M, is designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 1.3A at 25°C (Tc). The AOD1N60M offers a maximum power dissipation of 45W (Tc) and exhibits a low on-resistance (Rds On) of 9 Ohm maximum at 650mA and 10V gate drive. Key parameters include a gate charge (Qg) of 8nC maximum at 10V and input capacitance (Ciss) of 160pF maximum at 25V. The MOSFET is packaged in a TO-252-3 DPAK surface mount configuration, suitable for various industrial and consumer electronics applications requiring robust switching performance. Operating temperature range is -50°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 9Ohm @ 650mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF @ 25 V |
Request a Quote
Clients Also Buy
AONS520A70
N
AONV110A60
N
AOK065A60FD
LINEAR IC
