AOD11S60
MOSFET N-CH 600V 11A TO252Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOD11S60. This TO-252 (DPAK) packaged device offers a 600V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C. With a maximum Rds(on) of 399mOhm at 3.8A and 10V Vgs, it is designed for efficient power switching applications. Key parameters include a gate charge of 11 nC and input capacitance of 545 pF at 100V. The device supports a maximum gate-source voltage of ±30V and has a threshold voltage of 4.1V at 250µA. Maximum power dissipation is 208W at the case temperature. This component is suitable for use in power supply, lighting, and industrial automation applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 399mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 545 pF @ 100 V |
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