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AOC2423

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AOC2423

MOSFET P-CH 20V 2A 4ALPHADFN

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AOC2423 is a P-Channel MOSFET designed for demanding applications. This device features a 20V Drain-Source Voltage (Vdss) and a continuous drain current capability of 2A at 25°C. With a low on-resistance (Rds On) of 80mOhm maximum at 1A and 10V Vgs, it minimizes conduction losses. The AOC2423 is housed in a compact 4-AlphaDFN (0.97x0.97) surface mount package, optimized for thermal performance with a maximum power dissipation of 600mW. It offers a gate charge (Qg) of 10 nC maximum and input capacitance (Ciss) of 470 pF maximum. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for use in automotive, industrial, and consumer electronics where efficient power switching is critical. The drive voltage range for optimal Rds On is between 2.5V and 10V, with a maximum gate-source voltage of ±12V and a threshold voltage (Vgs(th)) of 1.2V maximum.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1.2V @ 250µA
Supplier Device Package4-AlphaDFN (0.97x0.97)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 10V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds470 pF @ 10 V

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