AOC2401
MOSFET P-CH 30V 3A 4ALPHADFNManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. presents the AOC2401, a P-Channel MOSFET designed for efficient power management applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 3A at 25°C. The AOC2401 exhibits a low on-resistance (Rds On) of 41mOhm maximum at 1.5A and 10V gate drive. Its 4-AlphaDFN (1.57x1.57) package facilitates high-density board designs, suitable for applications in consumer electronics and industrial automation. Key electrical characteristics include a gate charge (Qg) of 40 nC maximum at 10V and input capacitance (Ciss) of 1327 pF maximum at 15V. The device operates across a temperature range of -55°C to 150°C (TJ) and offers a maximum power dissipation of 550mW (Ta). This MOSFET is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 250µA |
| Supplier Device Package | 4-AlphaDFN (1.57x1.57) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1327 pF @ 15 V |
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