AOB7S60L
MOSFET N-CH 600V 7A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS™ series N-Channel Power MOSFET, part number AOB7S60L, offers a 600V drain-source breakdown voltage and a continuous drain current of 7A at 25°C (Tc). This surface-mount device, housed in a TO-263 (D2PAK) package, features a maximum power dissipation of 104W (Tc). The Rds(On) is specified at 600mOhm maximum at 3.5A and 10V gate drive. Key parameters include Vgs(th) of 3.9V (max) at 250µA, gate charge (Qg) of 8.2nC (max) at 10V, and input capacitance (Ciss) of 372pF (max) at 100V. It is rated for operation across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and industrial motor control.
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 372 pF @ 100 V |