AOB66920L
MOSFET N-CH 100V 22.5A/80A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AlphaSGT™ series AOB66920L is an N-Channel MOSFET designed for high-efficiency power applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 22.5A at 25°C ambient, and 80A at 25°C case temperature. With a maximum on-resistance (Rds On) of 8mOhm at 20A and 10V gate-source voltage, it offers low conduction losses. The device supports a gate drive voltage range from 4.5V to 10V and exhibits a maximum gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 2500 pF at 50V. Rated for a maximum power dissipation of 8.3W (Ta) and 100W (Tc), it operates reliably from -55°C to 150°C. The AOB66920L is supplied in a TO-263 (D2PAK) surface-mount package, suitable for demanding thermal management in industrial power supplies, automotive systems, and battery management applications.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22.5A (Ta), 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 100W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 50 V |
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