AOB66919L
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AlphaSGT™ series N-Channel Power MOSFET, part number AOB66919L, offers a 100V drain-to-source voltage and a continuous drain current of 26A at ambient temperature, scaling to 105A at case temperature. This surface mount TO-263 (D2PAK) device features a maximum on-resistance of 6.5mOhm at 20A and 10V gate-source voltage. With a maximum power dissipation of 10W (ambient) and 187W (case), it is suitable for applications requiring high efficiency power conversion. Key characteristics include a gate charge of 66 nC at 10V and input capacitance of 3420 pF at 50V. Operating temperature range is -55°C to 175°C (TJ). This component is utilized in demanding applications across automotive, industrial power, and telecom sectors. Packaged in Tape & Reel (TR).
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 26A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 187W (Tc) |
| Vgs(th) (Max) @ Id | 2.6V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3420 pF @ 50 V |
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