AOB66918L
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AlphaSGT™ AOB66918L is an N-Channel MOSFET designed for demanding power applications. This device features a 100 V drain-source breakdown voltage (Vdss) and a low on-resistance (Rds On) of 5 mOhm at 20 A and 10 V gate-source voltage. With a continuous drain current rating of 33 A at 25°C ambient and 120 A at 25°C case temperature, coupled with a maximum power dissipation of 375 W (Tc), the AOB66918L offers robust thermal performance. It is packaged in a TO-263-3 (D2PAK) surface-mount configuration, suitable for high-density board designs. Key electrical parameters include a maximum gate charge (Qg) of 105 nC at 10 V and input capacitance (Ciss) of 6500 pF at 50 V. This component is utilized in various industrial sectors including automotive, power supplies, and motor control. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6500 pF @ 50 V |
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