AOB66916L
MOSFET N-CH 100V 35.5/120A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AlphaSGT™ series N-Channel Power MOSFET, part number AOB66916L. This component features a 100V drain-source voltage (Vdss) and a low on-resistance of 3.6mOhm at 20A, 10V. It offers a continuous drain current of 35.5A at 25°C ambient temperature and 120A at 25°C case temperature. The device supports a gate drive voltage range from 6V to 10V.
Key electrical parameters include a maximum gate charge (Qg) of 78 nC at 10V and a maximum input capacitance (Ciss) of 6180 pF at 50V. The AOB66916L is packaged in a TO-263-3, D2PAK surface-mount package, designed for efficient thermal management with a maximum power dissipation of 8.3W (Ta) and 277W (Tc). This MOSFET is suitable for applications in power supply units, motor control, and battery management systems. Operating temperature range is -55°C to 150°C (TJ). Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35.5A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 277W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6180 pF @ 50 V |
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