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AOB66914L

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AOB66914L

N

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaSGT™ N-Channel MOSFET, part number AOB66914L, offers a 100V drain-source breakdown voltage and a continuous drain current of 45A at 25°C ambient or 120A at 25°C case temperature. This TO-263 (D2PAK) surface-mount device features a low on-resistance of 3.5mOhm maximum at 20A and 6V gate-source voltage. Key parameters include a gate charge of 220 nC maximum at 10V and input capacitance of 12500 pF maximum at 50V. It is designed for efficient power handling with maximum power dissipation of 10W ambient or 375W case. This component is suitable for demanding applications in power supply, automotive, and industrial sectors. The device operates from -55°C to 175°C and is supplied in Tape & Reel packaging.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C45A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 6V
FET Feature-
Power Dissipation (Max)10W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12500 pF @ 50 V

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