AOB66811L
FET N CHANNEL 80VManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOB66811L is an N-Channel AlphaSGT2™ Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 80 V and a continuous drain current capability of 44A at ambient temperature (Ta) and 140A at case temperature (Tc). With a low on-resistance (Rds On) of 2.7mOhm at 20A and 10V, it offers efficient power handling. The device supports drive voltages from 8V to 10V, with a maximum gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 5750 pF at 40V. Maximum power dissipation is 10W (Ta) and 310W (Tc). This surface mount device, packaged in a TO-263-3 (D2PAK) configuration, is suitable for operation across a wide temperature range from -55°C to 175°C. Its performance characteristics make it relevant for power supply designs, motor control, and automotive systems.
Additional Information
Series: AlphaSGT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Ta), 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 310W (Tc) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5750 pF @ 40 V |
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