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AOB66620L

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AOB66620L

N

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. N-Channel MOSFET, part number AOB66620L from the AlphaSGT™ series. This device features a 60V drain-source breakdown voltage and a continuous drain current of 23A at ambient temperature or 57A at case temperature. With a maximum on-resistance of 8.5mOhm at 20A and 10V gate drive, it offers low conduction losses. The AOB66620L is designed for efficient power switching applications, suitable for use in industrial power supplies, automotive electronics, and renewable energy systems. It is housed in a TO-263 (D2PAK) surface-mount package, supplied on tape and reel. Key parameters include a gate charge of 25 nC and input capacitance of 1070 pF. The operating temperature range is -55°C to 150°C.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C23A (Ta), 57A (Tc)
Rds On (Max) @ Id, Vgs8.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id3.6V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)8V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1070 pF @ 30 V

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