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AOB66616L

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AOB66616L

MOSFET N-CH 60V 38.5A/140A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. AlphaSGT™ series N-Channel MOSFET, part number AOB66616L. This surface mount device features a 60V drain-source voltage and a continuous drain current of 38.5A at 25°C ambient or 140A at 25°C case temperature. With a maximum power dissipation of 8.3W (ambient) and 125W (case), it is suitable for demanding applications. The TO-263 (D2PAK) package offers efficient heat dissipation. Key electrical characteristics include a maximum on-resistance of 3.2mOhm at 20A and 10V Vgs, input capacitance of 2870pF at 30V, and a gate charge of 60nC at 10V. This component is designed for operation across a temperature range of -55°C to 150°C. It finds application in power management, automotive systems, and industrial equipment requiring robust power switching.

Additional Information

Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38.5A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs3.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)8.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id3.4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2870 pF @ 30 V

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