AOB66613L
MOSFET N-CH 60V 44.5A/120A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AlphaSGT™ series N-Channel MOSFET, part number AOB66613L. This device features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 44.5A at 25°C ambient and 120A at 25°C case temperature. The AOB66613L offers a low on-resistance (Rds On) of 2.5 mOhm maximum at 20A and 10V Vgs. It is packaged in a TO-263-3, D2PAK surface-mount package, suitable for high-power applications. Maximum power dissipation is rated at 8.3W (Ta) and 260W (Tc). Key electrical characteristics include a gate charge (Qg) of 110 nC maximum at 10V Vgs and an input capacitance (Ciss) of 5300 pF maximum at 30V Vds. The operating temperature range is -55°C to 150°C (TJ). This component is utilized in power supply, industrial, and automotive applications.
Additional Information
Series: AlphaSGT™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44.5A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 8.3W (Ta), 260W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 30 V |
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