AOB66518L
NManufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. AOB66518L is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a maximum drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) capability of 30 A at 25°C ambient, scaling to 120 A at 25°C case temperature. The low on-resistance of 5 mOhm at 20 A and 10 V gate-source voltage ensures minimal conduction losses.
The AOB66518L exhibits a maximum power dissipation of 10 W (Ta) and 375 W (Tc), supported by its TO-263 (D2PAK) surface-mount package. Key parameters include a gate charge (Qg) of 115 nC at 10 V and an input capacitance (Ciss) of 6460 pF at 75 V. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding applications in automotive, industrial, and power supply sectors. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 10W (Ta), 375W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6460 pF @ 75 V |
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