AOB600A70L
MOSFET N-CH 700V 8.5A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel Power MOSFET, part number AOB600A70L, features a 700V drain-source breakdown voltage and a continuous drain current of 8.5A at 25°C (Tc). This device offers a maximum on-resistance of 600mOhm at 2.5A and 10V Vgs, with a gate charge of 15.5 nC at 10V. Designed for surface mounting, it is housed in a TO-263-3, D2PAK package. The maximum power dissipation is 104W (Tc). Key parameters include input capacitance (Ciss) of 870pF at 100V and a threshold voltage (Vgs(th)) of 3.5V at 250µA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in industrial power supplies, lighting, and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 100 V |
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