AOB600A60L
MOSFET N-CH 600V 8A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. aMOS5™ N-Channel Power MOSFET, part number AOB600A60L, features a 600V drain-source breakdown voltage and an 8A continuous drain current at 25°C. This surface-mount device, packaged in a TO-263 (D2PAK), offers a maximum on-resistance of 600mOhm at 2.1A and 10V Vgs. Key parameters include a 608pF input capacitance and 11.5nC gate charge, supporting efficient switching. The device is rated for 96W maximum power dissipation and operates across a temperature range of -55°C to 150°C. Suitable for high-voltage applications in power factor correction, switch-mode power supplies, and industrial motor control.
Additional Information
Series: aMOS5™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 608 pF @ 100 V |
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