AOB4S60L
MOSFET N-CH 600V 4A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Alpha & Omega Semiconductor Inc. AOB4S60L is a surface-mount N-Channel Power MOSFET from the aMOS™ series, designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The device exhibits a typical on-resistance (Rds On) of 900mOhm at 2A and 10V Vgs, and a gate charge (Qg) of 6nC at 10V. Input capacitance (Ciss) is rated at 263pF maximum at 100V. Packaged in a TO-263 (D2PAK) surface-mount configuration, the AOB4S60L is suitable for use in power supply units, lighting, and industrial applications demanding robust high-voltage switching performance. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: aMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.1V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 263 pF @ 100 V |