AOB482L
MOSFET N-CH 80V 11A/105A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel MOSFET, part number AOB482L. This device features a Drain-Source Voltage (Vdss) of 80V and a continuous drain current (Id) of 11A at ambient temperature (Ta) and 105A at case temperature (Tc). With a low On-Resistance (Rds On) of 6.9mOhm at 20A and 10V, it offers efficient power handling. The AOB482L is housed in a TO-263-3, D2PAK surface mount package, suitable for high-power applications. Key parameters include a maximum Gate Charge (Qg) of 81nC at 10V and Input Capacitance (Ciss) of 4870pF at 40V. Maximum power dissipation is rated at 2.1W (Ta) and 333W (Tc). This component is utilized in automotive and industrial power management systems. Operating temperature range is -55°C to 175°C.
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4870 pF @ 40 V |
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