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AOB480L

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AOB480L

MOSFET N-CH 80V 15A/180A TO263

Manufacturer: Alpha & Omega Semiconductor Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel power MOSFET, part number AOB480L. This surface mount device features an 80V drain-source breakdown voltage and is housed in a TO-263 (D2PAK) package. It offers a continuous drain current of 15A at 25°C ambient and 180A at 25°C case temperature. The on-resistance (Rds On) is specified at a maximum of 4.2mOhm at 20A and 10V gate-source voltage. Key parameters include a gate charge of 140 nC at 10V and input capacitance (Ciss) of 7820 pF at 40V. Maximum power dissipation is 1.9W (Ta) and 333W (Tc). This component is suitable for applications requiring high current density and efficient power switching, often found in power supplies, automotive systems, and industrial motor control. The operating temperature range is -55°C to 175°C.

Additional Information

Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs4.2mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)80 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7820 pF @ 40 V

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