AOB470L
MOSFET N-CH 75V 10A/100A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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The Alpha & Omega Semiconductor Inc. AOB470L is an N-Channel MOSFET designed for demanding applications requiring efficient power switching. This component features a drain-to-source voltage (Vdss) of 75 V and a continuous drain current (Id) capability of 10 A at 25°C ambient temperature, scaling to 100 A at 25°C case temperature. With a low on-resistance (Rds On) of 10.2 mOhm at 30 A and 10 V drive voltage, it minimizes conduction losses. The device boasts a maximum power dissipation of 2.1 W (ambient) and 268 W (case) and is housed in a surface-mount TO-263-3, D2PAK package for thermal management. Key parameters include a gate charge (Qg) of 136 nC and input capacitance (Ciss) of 5640 pF. Operating across a junction temperature range of -55°C to 175°C, the AOB470L is suitable for use in power supplies, motor control, and other high-power switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 268W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 136 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 30 V |
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