AOB442
MOSFET N-CH 40V 21A/105A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. SDMOS™ series N-Channel MOSFET AOB442. This surface-mount TO-263 (D2PAK) device features a 40V drain-source breakdown voltage and a continuous drain current rating of 21A at ambient temperature and 105A at case temperature. With a maximum on-resistance of 4.2mOhm at 20A and 10V Vgs, it offers low conduction losses. The device supports a gate drive range of 4.5V to 10V. Key parameters include a typical input capacitance (Ciss) of 5600pF at 20V and a gate charge (Qg) of 90nC at 10V. The AOB442 is rated for a maximum power dissipation of 3.5W at ambient and 150W at case temperature, with an operating junction temperature range of -55°C to 175°C. This component is suitable for applications in power management, automotive, and industrial sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.3V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 20 V |
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