AOB418L
MOSFET N-CH 100V 9.5A/105A TO263Manufacturer: Alpha & Omega Semiconductor Inc.
Categories: Single FETs, MOSFETs
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Alpha & Omega Semiconductor Inc. AOB418L is an N-Channel Power MOSFET from the SDMOS™ series. This component offers a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 9.5A at 25°C ambient, and 105A at 25°C case temperature. With a maximum Rds(on) of 9.7mOhm at 20A and 10V, it utilizes advanced MOSFET technology for efficient power switching. The device features a low gate charge (Qg) of 83 nC at 10V and an input capacitance (Ciss) of 5200 pF at 50V. Maximum power dissipation is 2.1W (Ta) and 333W (Tc). The AOB418L is housed in a TO-263-3, D2PAK surface mount package, suitable for applications in power supplies and motor control. Operating temperature range is -55°C to 175°C (TJ). It is supplied on a Tape & Reel (TR) for automated assembly.
Additional Information
Series: SDMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 333W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5200 pF @ 50 V |
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